N-Channel 20-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is  extracted and optimized over the  −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at

文件：234.64 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen II Power MOSFET • Ultra Low Thermal Resistance Using Top- Exposed PolarPAK® Package for Double- Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size

文件：195.59 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen II Power MOSFET • Ultra Low Thermal Resistance Using Top- Exposed PolarPAK® Package for Double- Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size

文件：195.59 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 20-V (D-S) MOSFET

Vishay

威世