SIE808DF中文资料威世科技数据手册PDF规格书
SIE808DF规格书详情
DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics whileavoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Applyfor both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
产品属性
- 型号:
SIE808DF
- 制造商:
VISHAY
- 制造商全称:
Vishay Siliconix
- 功能描述:
N-Channel 20-V(D-S) MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
2021+ |
POLARPA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
Vishay Siliconix |
2022+ |
10-PolarPAK?(L) |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
VISHAY/威世 |
09+ |
POLARPAK |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
UTC/友顺 |
22+ |
POLARPAK |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
VISHAY/威世 |
20+ |
POLARPA |
1100 |
全新原装现货 |
询价 | ||
VISHAY/威世 |
2023+ |
PolarPAK-10 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
Vishay Siliconix |
22+ |
10PolarPAK? (L) |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY |
1836+ |
POLARPAK |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
UTC/友顺 |
21+ |
POLARPAK |
20000 |
进口全新原装正品现货 |
询价 | ||
UTC |
2018+ |
POLARPAK |
10000 |
原装柜台现货特价热卖 |
询价 |