丝印：SI4435DY；30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

文件：197.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：SI4435DY；30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

文件：197.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS

文件：93.27 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm

VDSS = -30V RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i

文件：82.64 Kbytes 页数：8 Pages

IRF

P-Channel MOSFET

■ Features ● VDS=-30V ● RDS(on)=0.02Ω @VGS=-10V ● RDS(on)=0.035Ω @VGS=-4.5V

文件：490.75 Kbytes 页数：2 Pages

KEXIN

科信电子

P-Channel MOSFET

■ Features ● VDS=-30V ● RDS(on)=0.02Ω @VGS=-10V ● RDS(on)=0.035Ω @VGS=-4.5V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

文件：523.049 Kbytes 页数：2 Pages

KEXIN

科信电子

HEXFET Power MOSFET

VDSS = -30V RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i

文件：107.91 Kbytes 页数：8 Pages

IRF

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • Load Switch • Battery Switch

文件：1.00124 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Ultra Low On-Resistance

VDSS = -30V RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i

文件：88.2 Kbytes 页数：8 Pages

IRF

Simple Drive Requirements

文件：113.3 Kbytes 页数：8 Pages

IRF