P-Channel MOSFET

■ Features ● VDS=-30V ● RDS(on)=0.02Ω @VGS=-10V ● RDS(on)=0.035Ω @VGS=-4.5V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

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KEXIN

科信电子

HEXFET Power MOSFET

VDSS = -30V RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i

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IRF

Simple Drive Requirements

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IRF

Ultra Low On-Resistance

VDSS = -30V RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i

文件：88.2 Kbytes 页数：8 Pages

IRF