TPS70938DBVR

Marking：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators With Enable

1Features •Ultra-lowIQ:1μA •Reversecurrentprotection •LowISHUTDOWN:150nA •Inputvoltagerange:2.7Vto30V •Supports200-mApeakoutput •2%accuracyovertemperature •Availableinfixed-outputvoltages: 1.2Vto6.5V •Thermalshutdownandovercurrentprotection •

TPS70938DBVT

Marking：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators With Enable

1Features •Ultra-lowIQ:1μA •Reversecurrentprotection •LowISHUTDOWN:150nA •Inputvoltagerange:2.7Vto30V •Supports200-mApeakoutput •2%accuracyovertemperature •Availableinfixed-outputvoltages: 1.2Vto6.5V •Thermalshutdownandovercurrentprotection •

TPS70938DBVR

Marking：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

TPS70938DBVR

Marking：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

TPS70938DBVT

Marking：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

TPS70938DBVT

Marking：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

LSIC1MO120G0025

Marking：SIC1MO120G0025；Package：TO-247-4L；1200 V, 25 mOhm N-Channel SiC MOSFET

Features •Optimizedforhigh-frequency,high-efficiencyapplications •Extremelylowgatechargeandoutputcapacitance •Lowgateresistanceforhigh-frequencyswitching •Normally-offoperationsatalltemperatures •Ultra-lowon-resistance •Optimizedpackagewithseparatedriversource

LSIC1MO120G0120

Marking：SIC1MO120G0120；Package：TO-247-4L；1200 V, 120 mOhm N-Channel SiC MOSFET

Features •Optimizedforhigh-frequency,high-efficiencyapplications •Extremelylowgatechargeandoutputcapacitance •Lowgateresistanceforhigh-frequencyswitching •Normally-offoperationsatalltemperatures •Ultra-lowon-resistance •Optimizedpackagewithseparatedriversource

LSIC1MO170E0750

Marking：SIC1MO170E0750；Package：TO-247-3L；1700 V, 750 mOhm N-Channel SiC MOSFET

Features •Optimizedforhigh-frequency,high-efficiencyapplications •Extremelylowgatechargeandoutputcapacitance •Lowgateresistanceforhigh-frequencyswitching •Normally-offoperationsatalltemperatures Ultra-lowon-resistance Applications •High-frequencyapplications •S

LSIC2SD065A10A

Marking：SIC2SD065A10；Package：TO-220-2L；LSIC2SD065A10A 650 V, 10 A SiC Schottky Barrier Diode

Description Thisseriesofsiliconcarbide(SiC)Schottkydiodeshas negligiblereverserecoverycurrent,highsurgecapability, andamaximumoperatingjunctiontemperatureof175 °C.Thesediodesseriesareidealforapplicationswhere improvementsinefficiency,reliability,andthermal m