丝印：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators With Enable

1 Features • Ultra-low IQ: 1 μA • Reverse current protection • Low ISHUTDOWN: 150 nA • Input voltage range: 2.7 V to 30 V • Supports 200-mA peak output • 2% accuracy over temperature • Available in fixed-output voltages: 1.2 V to 6.5 V • Thermal shutdown and overcurrent protection •

文件：2.12946 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators With Enable

1 Features • Ultra-low IQ: 1 μA • Reverse current protection • Low ISHUTDOWN: 150 nA • Input voltage range: 2.7 V to 30 V • Supports 200-mA peak output • 2% accuracy over temperature • Available in fixed-output voltages: 1.2 V to 6.5 V • Thermal shutdown and overcurrent protection •

文件：2.12946 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

文件：1.89085 Mbytes 页数：36 Pages

TI

德州仪器

丝印：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

文件：2.11287 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

文件：1.89085 Mbytes 页数：36 Pages

TI

德州仪器

丝印：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

文件：2.11287 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SIC1MO120G0025；Package：TO-247-4L；1200 V, 25 mOhm N-Channel SiC MOSFET

Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures • Ultra-low on-resistance • Optimized package with separate driver source

文件：415.04 Kbytes 页数：10 Pages

Littelfuse

力特

丝印：SIC1MO120G0120；Package：TO-247-4L；1200 V, 120 mOhm N-Channel SiC MOSFET

Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures • Ultra-low on-resistance • Optimized package with separate driver source

文件：528.61 Kbytes 页数：10 Pages

Littelfuse

力特

丝印：SIC1MO170E0750；Package：TO-247-3L；1700 V, 750 mOhm N-Channel SiC MOSFET

Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures Ultra-low on-resistance Applications • High-frequency applications • S

文件：515.2 Kbytes 页数：10 Pages

Littelfuse

力特

丝印：SIC2SD065A10；Package：TO-220-2L；LSIC2SD065A10A 650 V, 10 A SiC Schottky Barrier Diode

Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal m

文件：646.9 Kbytes 页数：5 Pages

Littelfuse

力特