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LSIC1MO120G0025

Marking:SIC1MO120G0025;Package:TO-247-4L;1200 V, 25 mOhm N-Channel SiC MOSFET

Features •Optimizedforhigh-frequency,high-efficiencyapplications •Extremelylowgatechargeandoutputcapacitance •Lowgateresistanceforhigh-frequencyswitching •Normally-offoperationsatalltemperatures •Ultra-lowon-resistance •Optimizedpackagewithseparatedriversource

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