首页 >SGP02N120XK>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
包装：管件 封装/外壳：TO-220-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 6.2A 62W TO220-3 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistributi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=0.2A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedfo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=0.2A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FastS-IGBTinNPT-technology FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologyLowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastS-IGBTinNPT-technology FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology DESCRIPTION ·LowSaturationVoltage:VCE(sat)=3.6V@IC=2A ·HighCurrentCapability ·HighInputImpedance ·Lowthermalresistance APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FastS-IGBTinNPT-technology FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastS-IGBTinNPT-technology FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBT DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·Motorcontrols ·Inverter ·SMPS | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode Allowednumberofshortcircuits:1s. •lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforfrequencyinvertersforwashingmachi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistributi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
产品属性
- 产品编号：
SGP02N120XKSA1
- 制造商：
Infineon Technologies
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- IGBT 类型：
NPT
- 不同 Vge、Ic 时 Vce(on)（最大值）：
3.6V @ 15V，2A
- 开关能量：
220µJ
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
23ns/260ns
- 测试条件：
800V，2A，91 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-220-3
- 供应商器件封装：
PG-TO220-3-1
- 描述：
IGBT 1200V 6.2A 62W TO220-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2305+ |
原厂封装 |
8900 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 | ||
Infineon Technologies |
23+ |
pg-to220-3 |
6996 |
只做原装正品现货 |
询价 | ||
Infineon |
1701+ |
? |
7500 |
只做原装进口,假一罚十 |
询价 | ||
Infineon |
20+ |
NA |
90000 |
原装正品现货/价格优势 |
询价 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
INFINEON |
20+ |
TO220-3 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
INFINEON/英飞凌 |
2022+ |
500 |
6600 |
只做原装,假一罚十,长期供货。 |
询价 | ||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 |
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