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SCT040W65G3-4中文资料Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package数据手册ST规格书
SCT040W65G3-4规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
AUK |
25+ |
TO220F |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
24+ |
50 |
询价 | |||||
STMicroelectronics |
23+ |
HU3PAK-7 |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 | ||
ST |
20000 |
原装现货,可追溯原厂渠道 |
询价 | ||||
ST |
33724 |
只做正品 |
询价 | ||||
ST(意法) |
2405+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
询价 |
