650V/20A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：442.48 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

650V/20A SiC Schottky Barrier Diode

Features Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements Applications Power Factor C

文件：371.46 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

These dual N Channel enhancement mode power fieldeffect transistors are using trench DMOS technology.

文件：963.9 Kbytes 页数：5 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

743.00 MHz SAW Filter

文件：678.37 Kbytes 页数：5 Pages

MuRata

村田

1A, Low Noise, Ultra-Low Dropout, Bias Rail CMOS Voltage Regulator

GENERAL DESCRIPTION The SGM2065 is a low noise, ultra-low dropout voltage linear regulator which is designed using CMOS technology. It is capable of supplying 1A output current with typical dropout voltage of only 220mV. The operating input voltage range is from 0.8V to 5.5V and bias supply

文件：832 Kbytes 页数：14 Pages

SGMICROSG Micro Corp

圣邦股份圣邦微电子（北京）股份有限公司