丝印：SCS212AN；Package：TO-263-2L；SiC Schottky Barrier Diode

Features 1) Low forward voltage 3) Temperature independent switching behavior 2) Negligible recovery time/current 4) Wide creepage distance = min. 5.10mm Applications ・Factory Automation ・EV Charger Station ・PV Power Conditioner ・Wireless Charger

文件：1.0212 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：SCS212AN；Package：TO-263-2L；Automotive Grade SiC Schottky Barrier Diode

Applications ・On Board Charger ・EV Charger ・DC/DC Converter ・Wireless Charger Features 1) AEC-Q101 qualified 5) Wide creepage distance = min. 5.10mm 3) Negligible recovery time/current 2) Low forward voltage 4) Temperature independent switching behavior

文件：1.01626 Mbytes 页数：10 Pages

ROHM

罗姆

650V, 12A, SMD, Silicon-carbide (SiC) SBD

Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package) • Low forward voltage\n• Negligible recovery time/current\n• Temperature independent switching behavior\n• Wide creepage distance = min. 5.10mm;

ROHM

罗姆

650V, 12A, SMD, Silicon-carbide (SiC) SBD for Automotive

Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package) • AEC-Q101 qualified\n• Low forward voltage\n• Negligible recovery time/current\n• Temperature independent switching behavior\n• Wide creepage distance = min. 5.10mm;

ROHM

罗姆