SCS210AN

Marking：SCS210AN；Package：TO-263-2L；SiC Schottky Barrier Diode

Features 1)Lowforwardvoltage 3)Temperatureindependentswitchingbehavior 2)Negligiblerecoverytime/current 4)Widecreepagedistance=min.5.10mm Applications ・FactoryAutomation ・EVChargerStation ・PVPowerConditioner ・WirelessCharger

SCS210ANHR

Marking：SCS210AN；Package：TO-263-2L；Automotive Grade SiC Schottky Barrier Diode

Features 5)Widecreepagedistance=min.5.10mm 3)Negligiblerecoverytime/current 2)Lowforwardvoltage 4)Temperatureindependentswitchingbehavior 1)AEC-Q101qualified Applications ・OnBoardCharger ・EVCharger ・DC/DCConverter ・WirelessCharger

SCS210KG

SiCSchottkyBarrierDiode

SCS210KGHR

SiCSchottkyBarrierDiode

SCS210KGHR

SiCSchottkyBarrierDiode

SCS210KN

SiCSchottkyBarrierDiode

Features 1)Lowforwardvoltage 2)Negligiblerecoverytime/current 3)Temperatureindependentswitchingbehavior 4)Widecreepagedistance=min.5.10mm Applications ・FactoryAutomation ・PVPowerConditioner ・WirelessCharger ・EVChargerStation

SCS210KNHR

AutomotiveGradeSiCSchottkyBarrierDiode

Features 5)Widecreepagedistance=min.5.10mm 3)Negligiblerecoverytime/current 2)Lowforwardvoltage 4)Temperatureindependentswitchingbehavior 1)AEC-Q101qualified Applications ・OnBoardCharger ・EVCharger ・DC/DCConverter ・WirelessCharger

SD210

High-SpeedAnalogN-ChannelDMOSFETs

DESCRIPTION TheCalogicSD210isa30Vanalogswitchdriverwithoutabuilt-inprotectiondiodefromgatetosubstrateforusewithSD212andSD214DMOSanalogswitches. FEATURES •HighInputtoOutputIsolation................120dB •LowOnResistance...........

SD210

High-SpeedAnalogN-ChannelDMOSFETs

SD210DE

HIGHSPEEDDMOSFETANALOGSWITCHESANDSWITCHARRAYS

Description TheSD210DE/214DEareenhancement-modeMOSFETsdesignedforhighspeedlow-glitchswitchinginaudio,video, andhigh-frequencyapplications.TheSD214DEisnormallyusedfor
±10-Vanalogswitching.TheseMOSFETsutilizelateral constructiontoachievelowcapacitanceandult