SCTH70N120G2V-7

Marking：SCT70N12；Package：HPPAK-7；Silicon carbide Power MOSFET 1200 V, 21 m廓 typ., 90 A in an H짼PAK?? package

SCTH90N65G2V-7

Marking：SCT90N65；Package：H2PAK-7；Silicon carbide Power MOSFET 650 V, 116 A, 18 m廓 (typ., TJ = 25 째C) in an H짼PAK?? package

SCTW40N120G2V

Marking：SCT40N120G2V；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 62 m廓 typ., 36 A in an HiP247 package

SCTW40N120G2VAG

Marking：SCT40N120G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package

SCTWA90N65G2V

Marking：SCT90N65G2V；Package：HiP247；Silicon carbide Power MOSFET 650 V, 119 A, 18 m廓 in an HiP247 long leads package

SCTWA90N65G2V-4

Marking：SCT90N65G2V；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 18 m廓 typ., 119 A in an HiP247-4 package

SDC12DT3

Marking：SC12；Package：SOT-23；LOW CLAMPING VOLTAGE TVS DIODE ARRAY

SQA401EEJW

Marking：SC-70-6L；Package：QJXXXX；Automotive P-Channel 20 V (D-S) 175 째C MOSFET

STPSC10H12G2-TR

Marking：SC10H12G2；Package：D2PAKHV；1200 V, 10 A, silicon carbide power Schottky diode

STPSC10H12G2Y-TR

Marking：SC10H12G2Y；Package：D2PAKHV；Automotive 1200 V, 10 A, silicon carbide power Schottky diode