RMQSAA3636DGBA

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RMQSDA3618DGBA

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RMQSDA3636DGBA

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RMQSGA3618DGBA

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RMQSGA3636DGBA

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RMQSKA3618DGBA

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency) with ODT

Features
PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ)
Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RMQSKA3636DGBA

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency) with ODT

Features
PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ)
Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RMQ06

SURFACE MOUNT RESISTOR

RMQ10

SURFACE MOUNT RESISTOR

RMQ10R-10K-J

SURFACE MOUNT RESISTOR