36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)

Description The RMQSAA3636DGBA is a 1,048,576-word by 36-bit and the RMQSAA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：363.53 Kbytes 页数：30 Pages

RENESAS

瑞萨

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description The RMQSDA3636DGBA is a 1,048,576-word by 36-bit and the RMQSDA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：403.69 Kbytes 页数：31 Pages

RENESAS

瑞萨

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description The RMQSDA3636DGBA is a 1,048,576-word by 36-bit and the RMQSDA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：403.69 Kbytes 页数：31 Pages

RENESAS

瑞萨

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)

Description The RMQSGA3636DGBA is a 1,048,576-word by 36-bit and the RMQSGA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：359.37 Kbytes 页数：30 Pages

RENESAS

瑞萨

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)

Description The RMQSGA3636DGBA is a 1,048,576-word by 36-bit and the RMQSGA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：359.37 Kbytes 页数：30 Pages

RENESAS

瑞萨

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency) with ODT

Features
Power Supply  1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
Clock  Fast clock cycle time for high bandwidth  Two input clocks (K and /K) for precise DDR timing at clock rising edges only  Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems 

文件：399.71 Kbytes 页数：31 Pages

RENESAS

瑞萨

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency) with ODT

Features
Power Supply  1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
Clock  Fast clock cycle time for high bandwidth  Two input clocks (K and /K) for precise DDR timing at clock rising edges only  Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems 

文件：399.71 Kbytes 页数：31 Pages

RENESAS

瑞萨

SURFACE MOUNT RESISTOR

文件：270.59 Kbytes 页数：4 Pages

RFE

RFE international

SURFACE MOUNT RESISTOR

文件：270.59 Kbytes 页数：4 Pages

RFE

RFE international

SURFACE MOUNT RESISTOR

文件：270.59 Kbytes 页数：4 Pages

RFE

RFE international