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RMQSDA3636DGBA中文资料瑞萨数据手册PDF规格书
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RMQSDA3636DGBA规格书详情
描述 Description
The RMQSDA3636DGBA is a 1,048,576-word by 36-bit and the RMQSDA3618DGBA is a 2,097,152-word by 18-bit
synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are
controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are
suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit
configuration. These products are packaged in 165-pin plastic FBGA package.