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RFE international

18-Mbit DDR™ II SRAM 2-word Burst

Description The RMQC4A1836DGBA is a 524,288-word by 36-bit and the RMQC4A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a

文件：855.35 Kbytes 页数：30 Pages

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18-Mbit DDR™ II SRAM 2-word Burst

Description The RMQC4A1836DGBA is a 524,288-word by 36-bit and the RMQC4A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a

文件：855.35 Kbytes 页数：30 Pages

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36-Mbit DDR™ II SRAM

Description The RMQC4A3636DGBA is a 1,048,576-word by 36-bit and the RMQC4A3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：856.11 Kbytes 页数：30 Pages

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36-Mbit DDR™ II SRAM

Description The RMQC4A3636DGBA is a 1,048,576-word by 36-bit and the RMQC4A3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：856.11 Kbytes 页数：30 Pages

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36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description The RMQCEA3636DGBA is a 1,048,576-word by 36-bit and the RMQCEA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：416.34 Kbytes 页数：31 Pages

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36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description The RMQCEA3636DGBA is a 1,048,576-word by 36-bit and the RMQCEA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：416.34 Kbytes 页数：31 Pages

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36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Description The RMQCHA3636DGBA is a 1,048,576-word by 36-bit and the RMQCHA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：846.53 Kbytes 页数：30 Pages

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36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Description The RMQCHA3636DGBA is a 1,048,576-word by 36-bit and the RMQCHA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：885.33 Kbytes 页数：30 Pages

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36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Description The RMQCHA3636DGBA is a 1,048,576-word by 36-bit and the RMQCHA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：846.53 Kbytes 页数：30 Pages

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