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RMQ

SURFACE MOUNT RESISTOR

RFERFE international

RFE国际公司RFE国际股份有限公司

RMQC4A1818DGBA

18-Mbit DDR™ II SRAM 2-word Burst

Description TheRMQC4A1836DGBAisa524,288-wordby36-bitandtheRMQC4A1818DGBAisa1,048,576-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryanda

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQC4A1836DGBA

18-Mbit DDR™ II SRAM 2-word Burst

Description TheRMQC4A1836DGBAisa524,288-wordby36-bitandtheRMQC4A1818DGBAisa1,048,576-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryanda

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQC4A3618DGBA

36-Mbit DDR™ II SRAM

Description TheRMQC4A3636DGBAisa1,048,576-wordby36-bitandtheRMQC4A3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQC4A3636DGBA

36-Mbit DDR™ II SRAM

Description TheRMQC4A3636DGBAisa1,048,576-wordby36-bitandtheRMQC4A3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQCEA3618DGBA

36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQCEA3636DGBA

36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQCHA3618DGBA

36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQCHA3618DGBA

36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQCHA3636DGBA

36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
21+
BGA
1574
询价
RENESAS
1923+
NA
6900
只做进口原装假一罚十品质决定一切价格优惠
询价
RENESAS/瑞萨
2318+
BGA
6800
十年专业专注 优势渠道商正品保证公司现货
询价
RENESAS/瑞萨
24+
BGA
145
原装现货
询价
RENESAS/瑞萨
24+
BGA
8120
全新原装正品现货 假一赔十
询价
DBLECTRO
23+
原厂原包
29960
只做进口原装 终端工厂免费送样
询价
亚成微
23+
TOLL
7500
亚成微全系列在售
询价
TOS
24+
SOT-123
9000
询价
reso
420
公司优势库存 热卖中!
询价
更多RMQ供应商 更新时间2025-7-23 14:20:00