36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Description The RMQCHA3636DGBA is a 1,048,576-word by 36-bit and the RMQCHA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：846.53 Kbytes 页数：30 Pages

RENESAS

瑞萨

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

文件：846.95 Kbytes 页数：30 Pages

RENESAS

瑞萨

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

文件：846.95 Kbytes 页数：30 Pages

RENESAS

瑞萨

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

文件：846.95 Kbytes 页数：30 Pages

RENESAS

瑞萨

36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Renesas

瑞萨

36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

The RMQCHA3636DGBA is a 1, 048, 576-word by 36-bit and the RMQCHA3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst count • Power Supply 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQDDQ)\n• I/O Common data input/output bus Pipelined double data rate operation HSTL I/O User programmable output impedance PLL circuitry for wide output data valid window and future frequency scaling Data valid pin (QVLD) to indicate vali;

Renesas

瑞萨