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RMQCEA3618DGBA中文资料PDF规格书

RMQCEA3618DGBA
厂商型号

RMQCEA3618DGBA

功能描述

36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

文件大小

416.34 Kbytes

页面数量

31

生产厂商 Renesas Electronics America
企业简称

RENESAS瑞萨

中文名称

瑞萨科技有限公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2024-6-22 12:36:00

RMQCEA3618DGBA规格书详情

Description

The RMQCEA3636DGBA is a 1,048,576-word by 36-bit and the RMQCEA3618DGBA is a 2,097,152-word by 18-bit

synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are

controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are

suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit

configuration. These products are packaged in 165-pin plastic FBGA package.

Features

- Power Supply

- 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)

供应商 型号 品牌 批号 封装 库存 备注 价格
亚成微
23+
TOLL
7500
亚成微全系列在售
询价
RESON
23+
6540
只做原装正品现货或者订货假一赔十!
询价
reso
420
公司优势库存 热卖中!
询价
RENESAS
1923+
NA
6900
只做进口原装假一罚十品质决定一切价格优惠
询价
TOS
07+
SOT-123
9000
询价
RENESAS/瑞萨
BGA
145
原装现货
询价
台产
23+
连接器
10500
专业做连接器接插件原装进口公司现货
询价
RENESAS/瑞萨
21+
BGA
1574
询价
DBLECTRO
23+
原厂原包
29960
只做进口原装 终端工厂免费送样
询价