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024N06N

OptiMOS??Power-TransistorFeaturesIdealforhighfrequencyswitchingandsync.rec.

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

FDB024N06

N-ChannelPowerTrench짰MOSFET60V,265A,2.4m廓

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •RDS(on)=1.8mΩ(Typ.)@VGS=10V,ID=75A •F

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KU024N06P

N-chTrenchMOSFET

GeneralDescription ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConverter,SynchronousRectificationandaloadswitchinbatterypoweredapplications FEATU

KECKEC CORPORATION

KEC株式会社

NVMFD024N06C

MOSFET??Power,DualN-Channel,SO-8FL60V,22.6m,24A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWD024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMFS024N06C

MOSFET-Power,SingleN-Channel,SO-8FL60V,22m,25A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFS024N06C

MOSFET-Power,SingleN-Channel,8FL60V,22.6m,24A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFS024N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,22.6m,24A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFWS024N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,22.6m,24A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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更多RMD024N06SL-AU供应商 更新时间2024-6-16 11:00:00