丝印：100N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N40DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =100A RDS(ON)

文件：2.08748 Mbytes 页数：8 Pages

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丝印：100N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =40V,ID =100A RDS(ON)

文件：1.02413 Mbytes 页数：8 Pages

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丝印：100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60AT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：346 Kbytes 页数：7 Pages

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丝印：100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60BT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：1.44149 Mbytes 页数：6 Pages

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丝印：AN60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

文件：158.88 Kbytes 页数：6 Pages

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丝印：AN60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DFV uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

文件：224.17 Kbytes 页数：6 Pages

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丝印：100N60；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60HD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：493.23 Kbytes 页数：7 Pages

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丝印：100N06；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

文件：384.16 Kbytes 页数：7 Pages

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丝印：100N60；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60T7 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：474.17 Kbytes 页数：7 Pages

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丝印：AN65；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N65DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

文件：278.89 Kbytes 页数：7 Pages

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