RM100N60DFV中文资料RECTRON数据手册PDF规格书

厂商型号	RM100N60DFV
功能描述	N-Channel Enhancement Mode Power MOSFET
丝印标识	AN60
封装外壳	DFN5X6-8L
文件大小	224.17 Kbytes
页面数量	6 页
生产厂商	Rectron Semiconductor
企业简称	RECTRON
中文名称	Rectron Semiconductor官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-30 16:25:00
人工找货	RM100N60DFV价格和库存，欢迎联系客服免费人工找货

Description

The RM100N60DFV uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Feature

VDS =65V,ID =95A

RDS(ON) < 4.6mΩ @ VGS=10V (Typ:3.8mΩ)

Special process technology for high ESD capability

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

RDS(ON) < 7mΩ @ VGS=4.5V (Typ:5.6mΩ)

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM100N60DFV