丝印：AN60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DFV uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

文件：224.17 Kbytes 页数：6 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

N-Channel Enhancement Mode Power MOSFET

Description The RM100N60HD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：493.23 Kbytes 页数：7 Pages

RECTRON

丽正国际

N-Channel Enhancement Mode Power MOSFET

Description The RM100N60LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

文件：384.16 Kbytes 页数：7 Pages

RECTRON

丽正国际

E Series Power MOSFET

文件：156.1 Kbytes 页数：8 Pages

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