型号：RM100N60LD；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

文件：384.16 Kbytes 页数：7 Pages

RECTRON

型号：PJD100N06SA-AU；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：491.51 Kbytes 页数：6 Pages

PANJIT

強茂

型号：PJP100N06SA-AU；Package：TO-220AB-L；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：459.29 Kbytes 页数：6 Pages

PANJIT

強茂