500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • High Voltage x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

文件：71.98 Kbytes 页数：3 Pages

MCC

HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IF 1200A ● VRRM 3300V ● Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability C

文件：68.7 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

丝印：CN30；Package：PDFN3X3-8L；N-Channel Enhancement MOSFET

Feature 30V,120A Rds (on)

文件：236.51 Kbytes 页数：7 Pages

RECTRON

丽正

丝印：120N30；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM120N30T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

文件：217.33 Kbytes 页数：8 Pages

RECTRON

丽正

丝印：120N40；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM120N40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：734.47 Kbytes 页数：9 Pages

RECTRON

丽正

丝印：120N40；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM120N40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

文件：714.04 Kbytes 页数：7 Pages

RECTRON

丽正

N-Channel Enhancement Mode Power MOSFET

Description The RM120N40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：734.47 Kbytes 页数：9 Pages

RECTRON

丽正

丝印：120N85；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description The RM120N85AT2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：1.29669 Mbytes 页数：7 Pages

RECTRON

丽正

R. F. Molded Chokes

[Ohmite Mfg. Co.]

文件：34.04 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

R. F. Molded Chokes

[Ohmite Mfg. Co.]

文件：34.04 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商