RM120N40LDV资料datasheet下载批发采购-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RM120N40LDV	文件：734.47 Kbytes Page：9 Pages	N-Channel Enhancement Mode Power MOSFET Description The RM120N40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A High density cell design for ultra low Rdson Fully characterized avalanche volta 文件：734.47 Kbytes 页数：9 Pages	RECTRON 丽正国际	RECTRON
RM120N40LDV	文件：300 bytes Page：1 Pages	MOSFET	Rectron 丽正国际	Rectron
RM120N40LD	文件：714.04 Kbytes Page：7 Pages	N-Channel Enhancement Mode Power MOSFET Description The RM120N40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) 文件：714.04 Kbytes 页数：7 Pages	RECTRON 丽正国际	RECTRON
RM120N40LD	文件：734.47 Kbytes Page：9 Pages	N-Channel Enhancement Mode Power MOSFET Description The RM120N40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A High density cell design for ultra low Rdson Fully characterized avalanche volta 文件：734.47 Kbytes 页数：9 Pages	RECTRON 丽正国际	RECTRON

更多RM120N40LDV供应商更新时间2025-12-12 14:01:00