Silicon N Channel IGBT High Speed Power Switching

* Low collector to emitter saturation voltage VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)  * Gate to emitter voltage rating 30 V * Pb-free lead plating and chip bonding

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Silicon N Channel IGBT High Speed Power Switching

* Low collector to emitter saturation voltage VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)  * Gate to emitter voltage rating 30 V * Pb-free lead plating and chip bonding

文件：87.98 Kbytes 页数：8 Pages

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Silicon N Channel IGBT High Speed Power Switching

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Silicon N-Channel IGBT High Speed Power Switching / TO-3PFM Package

* Low collector to emitter saturation voltage\n   VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)\n\n* Gate to emitter voltage rating 30 V\n\n* Pb-free lead plating and chip bonding

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