Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free

文件：81.74 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free

文件：81.74 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Renesas

瑞萨

Conductivity Switch Sensor SKU: SEN0223

Specification  Operating voltage: 3.3 ~ 5V  Output type: digital signal  Interface mode: PH2.0-3P  Can identify the maximum resistance: 10M  Board size: 30 * 22mm  Alligator clip length: 45cm  Weight: 22g

文件：223.27 Kbytes 页数：5 Pages

DFROBOT

上海智位机器人股份有限公司

SAW Filter 2441.8 MHz for Bluetooth

文件：544.8 Kbytes 页数：8 Pages

TAI-SAW

嘉硕科技

Your Best Partner For Frequency Devices

文件：7.43326 Mbytes 页数：8 Pages

TAI-SAW

嘉硕科技