25V, 35A, 5.8m廓max. N Channel Power MOS FET High Speed Power Switching

Features • Very high speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance • Pb-free • Halogen-free

文件：288.95 Kbytes 页数：7 Pages

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25V, 35A, 5.8mΩmax. N Channel Power MOS FET High Speed Power Switching

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