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型号	下载订购	功能描述	制造商上传企业	LOGO
RJK0303DPB	文件：123.9 Kbytes Page：7 Pages	Silicon N Channel Power MOS FET Power Switching 文件：123.9 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0303DPB-00-J0	文件：123.9 Kbytes Page：7 Pages	Silicon N Channel Power MOS FET Power Switching 文件：123.9 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RKR0303AKJ	文件：60.02 Kbytes Page：6 Pages	Silicon Schottky Barrier Diode for Rectifying Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for compact and high-density surface mount design. 文件：60.02 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
RKR0303AKJP	文件：60.02 Kbytes Page：6 Pages	Silicon Schottky Barrier Diode for Rectifying Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for compact and high-density surface mount design. 文件：60.02 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
RKR0303AKJR	文件：60.02 Kbytes Page：6 Pages	Silicon Schottky Barrier Diode for Rectifying Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for compact and high-density surface mount design. 文件：60.02 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS

更多RJK0303DPB供应商更新时间2025-10-5 10:03:00