Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for compact and high-density surface mount design.

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Silicon Schottky Barrier Diode for Rectifying

Features • Low reverse current drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for compact and high-density surface mount design.

文件：199.35 Kbytes 页数：8 Pages

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Silicon P Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 54 mΩ typ (VGS = –10 V, ID = –1.6 A) • Low drive current • High speed switching • 4.5 V gate drive

文件：90.36 Kbytes 页数：7 Pages

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Silicon P Channel MOS FET Power Switching

文件：105.05 Kbytes 页数：7 Pages

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