型号：NVS15B36CA；Package：SMAJ；1500W Transient Voltage Suppression Diodes

文件：1.12743 Mbytes 页数：11 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

型号：RFP12N10L；Package：TO-220AB；12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate

文件：361.5 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

型号：RFP018；ROOF FILTER FAN

> Very low noise > Minimal depth in enclosure > High through-flow air volume > High reliability > Time-saving installation and mat exchange

文件：253.87 Kbytes 页数：1 Pages

STEGO

型号：RFP10N12；N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：211.91 Kbytes 页数：4 Pages

GESS

GE Solid State

型号：RFP10N15；10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs

Features ● 10 A, 120V and 150V ● rDS(on) = 0.3Ω ● SOA is Power-Dissipation Limited ● Nanosecond Switching Speeds ● Linear Transfer Characteristics ● High Input Impedance ● Majority Carrier Device

文件：40.37 Kbytes 页数：5 Pages

Intersil

型号：RFP10N15；N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：211.91 Kbytes 页数：4 Pages

GESS

GE Solid State

型号：RFP10P03L；10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

文件：133.99 Kbytes 页数：8 Pages

Intersil

型号：RFP10P03L；10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

文件：272.14 Kbytes 页数：12 Pages

HARRIS

型号：RFP10P12；P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-Channel Enhancement - Mode Power Field-Effect Transistors Features: ■ SOA is power-dissipation limited ■ Nanoseconde switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：242.88 Kbytes 页数：4 Pages

GESS

GE Solid State

型号：RFP10P15；-10A, -150V, 0.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These ty

文件：305.11 Kbytes 页数：5 Pages

Intersil