BFR181

Marking：RFs；Package：SOT-23；NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available

BFR181T

Marking：RFs；Package：SOT-416；NPN Silicon RF Transistor

NPNSiliconRFTransistor Preliminarydata •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFR181W

Marking：RFs；Package：SOT-323；NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •EasytousePb-free(RoHScompliant)andhalogenfreeindustrystandardpackagewithvisibleleads •Qualificationreport

BFS481

Marking：RFs；Package：SOT-363；NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •Two(galvanic)internalisolatedTransistorsinonepackage •Fororientationinreelseepackageinformationbelow •Ea

BFR181

Marking：RFs；Package：SOT-23；NPN Silicon RF Transistor

BFR181

Marking：RFs；Package：SOT-23；Low Noise Silicon Bipolar RF Transistor

BFR181W

Marking：RFs；Package：SOT-323；NPN Silicon RF Transistor

BFR181W

Marking：RFs；Package：SOT-323；Low Noise Silicon Bipolar RF Transistor

BFS481

Marking：RFs；Package：SOT-363；NPN Silicon RF Transistor

BFS481

Marking：RFs；Package：SOT-363；Low Noise Silicon Bipolar RF Transistor