丝印：RFs；Package：SOT-23；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：78.35 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

文件：57.03 Kbytes 页数：7 Pages

SIEMENS

西门子

丝印：RFs；Package：SOT-23；Low Noise Silicon Bipolar RF Transistor

文件：619.16 Kbytes 页数：6 Pages

INFINEON

英飞凌

丝印：RFs；Package：SOT-23；NPN Silicon RF Transistor

文件：133.44 Kbytes 页数：7 Pages

INFINEON

英飞凌

低噪声RF 管基

NPN 硅射频晶体管，用于集电极电流为 0.5 mA 至 12 mA 的低噪声、高增益宽带放大器 • 适用于低噪声、高增益宽带放大器，集电极电流为 0.5 mA 至 12 mA\n• 无铅（符合 RoHS 标准）封装;

Infineon

英飞凌

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

文件：68.3 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：RFs；Package：SOT-416；NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

文件：70.57 Kbytes 页数：7 Pages

INFINEON

英飞凌

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to

文件：171.75 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

文件：68.3 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

文件：56.04 Kbytes 页数：7 Pages

SIEMENS

西门子