BFR181T

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain Applications   Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

BFR181T

Marking：RFs；Package：SOT-416；NPN Silicon RF Transistor

NPNSiliconRFTransistor Preliminarydata •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFR181TF

Silicon NPN Planar RF Transistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT-490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditionto

BFR181TW

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain Applications   Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

BFR181W

NPNSiliconRFTransistor)Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFR181W

NPNSiliconRFTransistor

BFR181W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •EasytousePb-free(RoHScompliant)andhalogenfreeindustrystandardpackagewithvisibleleads •Qualificationreport

BFR181W

LowNoiseSiliconBipolarRFTransistor

BFY181

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.2dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006

BFY181

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS