丝印：RFs；Package：SOT-416；NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

文件：70.57 Kbytes 页数：7 Pages

Infineon

英飞凌

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

文件：68.3 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to

文件：171.75 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

文件：68.3 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Silicon NPN Planar RF Transistor

Vishay

威世科技

Silicon NPN Planar RF Transistor

Vishay

威世科技