丝印：RFs；Package：SOT-363；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package • For orientation in reel see package information below • Ea

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NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.4 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

文件：53.43 Kbytes 页数：6 Pages

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丝印：RFs；Package：SOT-363；NPN Silicon RF Transistor

文件：127.17 Kbytes 页数：6 Pages

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丝印：RFs；Package：SOT-363；Low Noise Silicon Bipolar RF Transistor

文件：563.96 Kbytes 页数：6 Pages

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低噪声RF 管基

NPN 硅射频晶体管，用于集电极电流为 0.5 mA 至 12 mA 的低噪声、高增益宽带放大器 • 适用于低噪声、高增益宽带放大器，集电极电流从 0.5 mA 到 12 mA\n• 一个封装中有两个（电流）内部隔离晶体管\n• 无铅（符合 RoHS 标准）封装;

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NPN Silicon RF Transistor

文件：127.17 Kbytes 页数：6 Pages

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Low Noise Silicon Bipolar RF Transistor

文件：563.96 Kbytes 页数：6 Pages

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英飞凌