10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

文件：133.99 Kbytes 页数：8 Pages

INTERSIL

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

文件：272.14 Kbytes 页数：12 Pages

HARRIS

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -10A@ TC=25℃ ·Drain Source Voltage -VDSS= -30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：370.75 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 60-V (D-S) MOSFET

文件：955.58 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET

Renesas

瑞萨