RFP14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

RFP14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

Features •14A,50V •rDS(ON)=0.100Ω •TemperatureCompensatingPSPICE™Model •CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingS

RFP14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

RFP14N05L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

RFP14N05L

N-Channel 60 V(D-S) MOSFET

RFP14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

14N05

FastSwitching

FEATURES •DrainCurrentID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=50V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max) •FastSwitching APPLICATIONS •Switchregulators •Switchingconvertersmotordriversandrelaydrivers

14N05

N-Channel60V(D-S)MOSFET

14N05L

N-Channel60V(D-S)MOSFET

RFD14N05

N-Channel60V(D-S)MOSFET