12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate driv

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INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 180V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-Channel Enhancement Mode Power Field Effect Transistors

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

Description\nThese are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive po • 12A, 180V and 200V\n• rDS(ON) = 0.250Ω\n• Related Literature\n- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

Renesas

瑞萨

Trans MOSFET N-CH 180V 12A 3-Pin TO-220AB

NJS