P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-Channel Enhancement - Mode Power Field-Effect Transistors Features: ■ SOA is power-dissipation limited ■ Nanoseconde switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：242.88 Kbytes 页数：4 Pages

GESS

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -10A@ TC=25℃ ·Drain Source Voltage -VDSS= -120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：370.74 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

GESS

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified

文件：91.72 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：109.22 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件：103.64 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司