-10A, -150V, 0.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These ty

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INTERSIL

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-Channel Enhancement - Mode Power Field-Effect Transistors Features: ■ SOA is power-dissipation limited ■ Nanoseconde switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

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GESS

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -10A@ TC=25℃ ·Drain Source Voltage -VDSS= -150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

-10A, -150V, 0.500 Ohm, P-Channel Power MOSFET

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