14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

文件：83.45 Kbytes 页数：8 Pages

INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.41 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：960.7 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

文件：83.45 Kbytes 页数：8 Pages

INTERSIL

N-Channel 60 V (D-S) MOSFET

文件：960.45 Kbytes 页数：7 Pages

VBSEMI

微碧半导体