14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETsThese are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They wer • 14A, 60V\n• rDS(ON)= 0.100Ω\n• Temperature Compensating PSPICE® Model\n• Can be Driven Directly from CMOS, NMOS, and TTL Circuits\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• 175oC Operating Temperature\n• Related Literature\n- TB334 “Guidelines for Soldering Surface Mount\n   Compo;

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N-Channel 60 V (D-S) MOSFET

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14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

文件：83.45 Kbytes 页数：8 Pages

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N-Channel 60 V (D-S) MOSFET

文件：960.45 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

文件：83.45 Kbytes 页数：8 Pages

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