| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件:46.73 Kbytes 页数:4 Pages | INTERSIL | INTERSIL | |
RFP2N08 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.05Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:371.35 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs 文件:93.26 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs Description\nThese are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive p • 2A, 80V and 100V\n• rDS(ON) 1.05Ω\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Majority Carrier Device\n• Related Literature\n- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”; | Renesas 瑞萨 | Renesas | |
RFP2N08 | 2A 80V AND 100V 1.05 OHM N-CHANNEL POWER MOSFETS | NJS | NJS | |
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished th 文件:35.55 Kbytes 页数:5 Pages | INTERSIL | INTERSIL | ||
N-Channel Logic Level Power Field-Effect Transistors (L2 FET) 文件:92.71 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
Trans MOSFET N-CH 80V 2A 3-Pin(3+Tab) TO-220AB | NJS | NJS |
技术参数
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
25000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±10V
- Maximum Drain Source Voltage:
80V
- Maximum Continuous Drain Current:
2A
- Material:
Si
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
24+ |
N/A |
3560 |
询价 | |||
INTERSIL |
17+ |
TO-220 |
6200 |
询价 | |||
HARRIS |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
F |
24+ |
TO-220AB |
5000 |
全现原装公司现货 |
询价 | ||
INTESIL |
23+ |
TO-220 |
8000 |
专做原装正品,假一罚百! |
询价 | ||
NEXPERIA/安世 |
23+ |
SOT-323 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
INTESIL |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
INTERSIL |
2022+ |
to-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
HAR |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
INTERSIL |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
询价 |
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