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RFP2N08

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件:46.73 Kbytes 页数:4 Pages

INTERSIL

RFP2N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.05Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:371.35 Kbytes 页数:2 Pages

ISC

无锡固电

RFP2N08

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

文件:93.26 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFP2N08

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Description\nThese are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive p • 2A, 80V and 100V\n• rDS(ON) 1.05Ω\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Majority Carrier Device\n• Related Literature\n- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

Renesas

瑞萨

RFP2N08

2A 80V AND 100V 1.05 OHM N-CHANNEL POWER MOSFETS

NJS

NJS

RFP2N08L

2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished th

文件:35.55 Kbytes 页数:5 Pages

INTERSIL

RFP2N08L

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

文件:92.71 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFP2N08L

Trans MOSFET N-CH 80V 2A 3-Pin(3+Tab) TO-220AB

NJS

NJS

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    25000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±10V

  • Maximum Drain Source Voltage:

    80V

  • Maximum Continuous Drain Current:

    2A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
HAR
24+
N/A
3560
询价
INTERSIL
17+
TO-220
6200
询价
HARRIS
16+
TO-220
10000
全新原装现货
询价
F
24+
TO-220AB
5000
全现原装公司现货
询价
INTESIL
23+
TO-220
8000
专做原装正品,假一罚百!
询价
NEXPERIA/安世
23+
SOT-323
69820
终端可以免费供样,支持BOM配单!
询价
INTESIL
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
INTERSIL
2022+
to-220
12888
原厂代理 终端免费提供样品
询价
HAR
23+
NA
20000
全新原装假一赔十
询价
INTERSIL
23+
TO-220
89630
当天发货全新原装现货
询价
更多RFP2N08供应商 更新时间2026-1-17 16:01:00