12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs

These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic

文件：49.12 Kbytes 页数：6 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：309.81 Kbytes 页数：2 Pages

ISC

无锡固电

17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

文件：215.95 Kbytes 页数：10 Pages

Fairchild

仙童半导体

17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

文件：215.95 Kbytes 页数：10 Pages

Fairchild

仙童半导体

12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs

These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic

文件：49.12 Kbytes 页数：6 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.85 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：12N06LE；Package：TO-252；60V N-Channel MOSFET

Features • Ultra Low On-Resistance - RDS(ON)

文件：503.43 Kbytes 页数：7 Pages

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件：844.26 Kbytes 页数：4 Pages

Bychip

百域芯

N-Channel 6 0-V (D-S) MOSFET

文件：896.99 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N 沟道，UltraFET 功率 MOSFET，60V，17 A，71mΩ

RFD12N06RLESM •超低导通电阻\n•仿真模型\n•峰值电流与脉宽曲线\n•UIS额定值曲线\n•开关时间与RGS曲线;

ONSEMI

安森美半导体