MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and

文件：191.86 Kbytes 页数：10 Pages

RFMD

威讯联合

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and

文件：191.86 Kbytes 页数：10 Pages

RFMD

威讯联合

MEDIUM POWER LINEAR AMPLIFIER

文件：215.87 Kbytes 页数：10 Pages

RFMD

威讯联合

MEDIUM POWER LINEAR AMPLIFIER

文件：215.87 Kbytes 页数：10 Pages

RFMD

威讯联合

MEDIUM POWER LINEAR AMPLIFIER

文件：215.87 Kbytes 页数：10 Pages

RFMD

威讯联合

MEDIUM POWER LINEAR AMPLIFIER

Product Description\nThe RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 10 • 450MHz to 1000MHz Operation\n• Up to 750mW CW Output Power\n• 31dB Small Signal Gain\n• Single 2.7V to 7.5V Supply\n• 47% Efficiency\n• Digitally Controlled Power Down ModeTypical Applications\n• Digital Communication Systems\n• Spread-Spectrum Communication Systems\n• Driver for Higher Power ;

Qorvo

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