744762227GA

Marking：R27；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

78433390150

Marking：R27；WE-CHSA Performance SMD High Current Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+150°Cunderworst caseconditions AmbientTemperature(referring toIR)-55upto+100°C OperatingTemperature-55upto+150°C StorageConditions(inoriginal packaging)

BFR93A

Marking：R2p；Package：SOT-23；NPN 6 GHz wideband transistor

DESCRIPTION NPNwidebandtransistorinaplasticSOT23package.PNPcomplement:BFT93. FEATURES •Highpowergain •Lownoisefigure •Verylowintermodulationdistortion. APPLICATIONS •RFwidebandamplifiersandoscillators.

BFR93A

Marking：R2p；Package：SOT-23；NPN Silicon RF Transistor

NPNSiliconRFTransistor* •Forlow-noise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription

DMN2024UFU-13

Marking：R28；Package：U-DFN2030-6；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowGateThresholdVoltage LowOn-Resistance ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/101/

DMN2024UFU-7

Marking：R28；Package：U-DFN2030-6；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowGateThresholdVoltage LowOn-Resistance ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/101/

FJV3105RMTF

Marking：R25；Package：SOT-23；NPN Epitaxial Silicon Transistor

Description Transistorswithbuilt-inresistorscanbeexcellentspace-andcost-savingsolutionsbyreducingcomponentcountandsimplifyingcircuitdesign. Features •100mAOutputCurrentCapability •Built-inBiasResistor(R1=4.7kΩ,R2=10kΩ) Application •Switching,Interface,and

FTC3356

Marking：R24；Package：SOT-23；HIGH-Frequency Amplifier Transistor

DESCRIPTION TheFTC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES •LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0GHz •High

FTC3356U

Marking：R24；Package：SC-70；HIGH-Frequency Amplifier Transistor

DESCRIPTION TheFTC3356UisanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES ​​​​​​​•WedeclarethatthematerialofproductcompliancewithRoHSrequirements. •LowNoiseandHighG

LMR66420MC5RXBRQ1

Marking：R2MC5Q；Package：VQFN-FCRLF；LMR664x0-Q1, 36-V, 1-A, 2-A, and 3-A, Ultra-Small, Synchronous, Automotive Step-Down Converter

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •AEC-Q100-qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA •OptimizedforlowEMIrequirements: –Dualrandomspreadspectrumreducespeak emissions –