丝印：R22；WE-MXGI SMT Power Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：820.57 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R22；WE-XHMI SMT Power Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：906.77 Kbytes 页数：9 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R22；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：491.65 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R22；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：490.54 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R22；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：486.05 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R22；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 100 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two high-speed I/O lines Low clamping voltage Low leakage current IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (Lightning) 4A (8/20μs) Applications Cell Phone Handsets and Acc

文件：2.584 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：R22；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 100 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two unidirectional high-speed I/O lines Low clamping voltage Low leakage current IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-

文件：2.31241 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：R22；Package：SMD；This specification applies to large current and low loss SMD shielding power inductor.

文件：2.37045 Mbytes 页数：7 Pages

LEIDITECH

雷卯电子

丝印：R22；This specification applies to large current and low loss SMD shielding power inductor.

文件：1.80556 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：R22；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

文件：2.29442 Mbytes 页数：7 Pages

PJSEMI

平晶半导体