PXAD214218FVV1中文资料Cellular (2000 MHz to 2200 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 430W, 28V, 2110-2170MHz

特性 Features

·Broadband internal input and output matching
·Asymmetrical Doherty design    - Main : P 1dB = 130 W Typ    - Peak : P 1dB = 290 W Typ
·Typical Pulsed CW performance, 2140 MHz, 28 V, Doherty configuration    - Output power at P 3dB = 436 W    - Efficiency = 55%    - Gain = 13.5 dB
·Capable of handling 10:1 VSWR @28 V, 110 W (WCDMA) output power
·Integrated ESD protection
·Human Body Model class 2 (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant