PXAC210552NDV1中文资料Cellular (2000 MHz to 2200 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 55 W, 28 V, 1805 - 2170 MHz

特性 Features

 
·Broadband internal input and output matching
·Asymmetrical Doherty Design - Main: P 1dB = 20 W Typ - Peak: P 1dB = 35 W Typ
·Typical Pulsed CW performance, 1880 MHz, 26 V (Doherty Configuration) - Output power at P 1dB = 24.7 W - Efficiency = 55.3% - Gain = 15.05 dB
·Capable of handling 10:1 VSWR @28 V, 55 W (CW) output power
·Integrated ESD protection
·Human Body Model class 1C (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant