PXAC200902FCV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 90 W, 28 V, 1805 – 2170 MHz

特性 Features

·Broadband internal input and output matching
·Asymmetric Doherty design - Main: P 1dB = 35 W Typ - Peak: P 1dB = 55 W Typ
·Typical CW performance, 1920 MHz, 26 V  - Output power at P 1dB = 50 W - Efficiency = 58% - Gain = 16.6 dB
·Capable of handling 10:1 VSWR @28 V, 90 W (CW) output power
·Integrated ESD protection
·ESD Rating: Human Body Model, Class 1C (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant
·Package: H-37248-4, earless