PXAC201202FCV2中文资料Cellular (2000 MHz to 2200 MHz)数据手册Infineon规格书

描述 Description

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz

特性 Features

·Asymmetric Doherty design:  - Main = 35 W Typ (P1dB)  - Peak = 80 W Typ (P1dB)
·Broadband internal matching
·CW performance in a Doherty configuration, 1805 MHz, 28 V - Output power = 100 W P1dB - Gain = 17.3 dB at 17.8 W Avg. - Efficiency = 46% at 17.8 W Avg.
·CW performance in a Doherty configuration, 2100 MHz, 28 V - Output power = 15.8 W Avg. - Gain = 15.5 dB - Efficiency = 46%
·Capable of handling 10:1 VSWR @ 28 V, 16 W (CW) output power
·Integrated ESD protection, HBM Class 1C (per JESD22-A114)
·Low thermal resistance
·Pb-free and RoHS-compliant